Organic field-effect transistors from solution-deposited functionalized acenes with mobilities as high as 1 cm2/V x s.
| Author | |
|---|---|
| Abstract | :
We present the device parameters for organic field-effect transistors fabricated from solution-deposited films of functionalized pentacene and anthradithiophenes. These materials are easily prepared in one or two steps from commercially available starting materials and are purified by simple recrystallization. For a solution-deposited film of functionalized pentacene, hole mobility of 0.17 cm2/V.s was measured. The functionalized anthradithiophenes showed behavior strongly dependent on the substituents, with hole mobilities as high as 1.0 cm2/V.s. |
| Year of Publication | :
2005
|
| Journal | :
Journal of the American Chemical Society
|
| Volume | :
127
|
| Issue | :
14
|
| Number of Pages | :
4986-7
|
| Date Published | :
2005
|
| ISSN Number | :
0002-7863
|
| URL | :
https://doi.org/10.1021/ja042353u
|
| DOI | :
10.1021/ja042353u
|
| Short Title | :
J Am Chem Soc
|
| Download citation |